![]() Compared with the other semiconductor-based photodetectors with their large internal gain, which include phototransistors 12 and photoconductors 13, APDs usually allow shorter internal response times, wider optical-to-electrical (O-E) bandwidths, lower noise-equivalent-power (NEP) ratios, and higher sensitivity performance. In coherent FMCW LiDAR test bed, this novel APD exhibits a larger signal-to-noise ratio and high-quality 3-D images than the reference dual M-layer and high-performance commercial p-i-n PD modules, while requiring significantly less optical local-oscillator (LO) power (0.5 vs 4 mW).Īvalanche photodiodes (APD) have come to play an important role at the receiving end in several different applications, such as fiber communications 1, 2, biosensing 3, LiDAR 4, 5, 6, 7, quantum photonics 8, quantum computing 9, 10 and optical wireless communications 11, over the last few decades. Extremely high saturation-current (> 14.6 mA), high responsivity (7.3 A/W), and decent O-E bandwidth (1.4 GHz) can be simultaneously achieved using the demonstrated APD with a 200 µm active window diameter. 130), and higher 1-dB saturation-current (> 5.6 vs. Compared to the dual M-layer reference sample, the demonstrated APD exhibits lower punch-through (− 9 vs. Reduced E-field in active M-layers ensures stronger E-field allocation to the thick absorption-layer with a smaller breakdown voltage (V br) resulting in less serious space-charge screening effect, less device heating at high output photocurrent. Our triple In 0.52Al 0.48As based multiplication (M-) layers with a stepped electric (E-) field inside has more pronounced avalanche process with significantly less effective critical-field than the dual M-layer. We demonstrate a novel avalanche photodiode (APD) design which fundamentally relaxes the trade-off between responsivity and saturation-current performance at receiver end in coherent system.
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